Samsung 990 EVO 2TB NVMe M.2 SSD – PCIe 4.0 x4 (Gen 5 x2), 5000 MB/s Read, 4200 MB/s Write, DRAM-Less HMB, Samsung V-NAND TLC, 1200 TBW, AES‑256

10,000 EGP

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Description

Model MZ-V9E2T0BW
Interface PCIe® 4.0 x4 / 5.0 x2, NVMe2.0
Capacity 2TB
Speed Up to 5,000 MB/s Sequential Read / Up to 4,200 MB/s Sequential Write 
Power / Active (Read/Write) 5.5W / 4.7W
Total Bytes Written (TBW) 1200
Dimensions (L x W x H) 80.15 x 22.15 x 2.38 mm
Weight 9.0g
Cache Memory HMB (Host Memory Buffer)
From Factory M.2 (2280)
Application Client PCs
Operating Temperature 0 – 70 ℃ Operating Temperature
Shock 1,500 G & 0.5 ms (Half sine)
Average Power Consumption (system level) Average: Read 4.6 W / Write 4.2 W* Actual power consumption may vary depending on system hardware & configuration
Power consumption (Idle) Typical 60 mW * Actual power consumption may vary depending on system hardware & configuration
Internal Storage Samsung V-NAND TLC
S.M.A.R.T. Support Supported
WWN Support Not supported
GC (Garbage Collection) Auto Garbage Collection Algorithm
Allowable Voltage 3.3 V ± 5 % Allowable voltage
Reliability (MTBF) 1.5 Million Hours Reliability (MTBF)